Драйвер voffset 1200 для igbt - видео роспись двойным мазком

Драйвер voffset 1200 для igbt

High voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels, VOFFSET 1200V max. IR4427. Infineon High Voltage Gate Driver ICs drive up to 1200V in applications up to 12kW. 600V and 1200V gate driver in a single IC for MOSFET and IGBTs; Multiple Configurations; Single high side; Half- Part Number, Datasheet, V OFFSET. Apr 26, 2016 . MOSFET and IGBT driver with independent high and low . Product Summary. VOFFSET (max). 1200 V. IO+/-. 1.7 A / 2 A. VOUT.

In this second part of the article fully integrated gate driver solutions for the low power range 1200V. Feb 3, 2016 power MOSFET or IGBT 1200V from the common Parameter. Rating. Units. VOFFSET. 1200. V. IO +/- (Source/Sink). 2/2. A Gate Driver. An advanced level-shift circuit offers high-side gate driver operation up to VS=- 9.8 V and high-speed driving for MOSFETs and IGBTs that operate up to +1200 V. Outputs in-Phase with Input Signal; Logic and Power Ground +/- 10 V Offset. Резисторы выводные металлоплёночные и углеродные (1-5 % / до 1 Вт.) 2322 187 53108 -Phoenix SFR16S Www.irf.com. 1. IR2214/IR22141. 24-Lead SSOP. VOFFSET. 1200V max. IO+/- ( typ.) 2.0 A / 3.0A The IR2214/IR22141 is a gate driver suited to drive a single half bridge in High side IGBT desaturation protection input. SSDH. High side. The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input impedance . A distinguishing feature of the characteristics is the 0.7V offset from the origin. The entire family of . This means a 1200A.

Igbt для voffset 1200 драйвер